Dressed tunneling approximation for electronic transport through molecular transistors

被引:24
作者
Seoane Souto, R. [1 ]
Yeyati, A. Levy
Martin-Rodero, A.
Monreal, R. C.
机构
[1] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain
关键词
QUANTUM DOTS; CONDUCTANCE;
D O I
10.1103/PhysRevB.89.085412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A theoretical approach for the nonequilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. It consists of a resummation of the dominant Feynman diagrams from the perturbative expansion in the coupling to the leads. We show that this scheme eliminates the main pathologies found in previous simple analytical approaches for the polaronic regime. The results for the spectral and transport properties are compared with those from several other approaches for a wide range of parameters. The method can be formulated in a simple way to obtain the full counting statistics. Results for the shot and thermal noise are presented.
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页数:9
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