Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon

被引:29
作者
Kohli, K. K. [1 ]
Davies, Gordon
Vinh, N. Q.
West, D.
Estreicher, S. K.
Gregorkiewicz, T.
Izeddin, I.
Itoh, K. M.
机构
[1] Kings Coll London, Dept Phys, London WC2R 2LS, England
[2] FOM Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[3] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[4] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
[5] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama, Kanagawa 2238522, Japan
关键词
D O I
10.1103/PhysRevLett.96.225503
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
By simply changing the isotopes of the Si atoms that neighbor an oxygen O-i atom in crystalline silicon, the measured decay rate tau of the asymmetric-stretch vibration (nu(3)=1136 cm(-1)) of oxygen (O-i) in silicon changes by a factor of similar to 2.5. These data establish that nu(3) decays by creating one nu(1) symmetric-stretch, local-vibrational mode of the Si-O-i-Si structure. If the residual energy (nu(3)-nu(1)) is less than the maximum frequency nu(m) of the host lattice, as for Si-28-O-16-Si-28 in natural silicon, then it is emitted as one lattice mode, and tau depends on the density of one-phonon states at nu(3)-nu(1). If (nu(3)-nu(1))>nu(m), as for O-16 in single-isotope Si-30 silicon, two lattice modes are created in addition to nu(1), increasing tau. Prediction of tau for a particular defect clearly requires a detailed knowledge of that defect.
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