The effect of proton implantation on photoluminescence from ensembles of InAs quantum dots embedded in GaAs

被引：0

作者：

Tang, N. Y. ^{[1
]}

Cui, Haoyang ^{[1
]}

机构：

[1] Shanghai Univ Elect Power, Dept Elect Sci & Technol, Shanghai 200090, Peoples R China

来源：

ADVANCED TECHNOLOGIES IN MANUFACTURING, ENGINEERING AND MATERIALS, PTS 1-3 | 2013年 / 774-776卷

关键词：

quantum dot; proton implantation; PL intensity; LUMINESCENCE; PASSIVATION; ENHANCEMENT; WELLS;

D O I：

10.4028/www.scientific.net/AMR.774-776.844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The light-emission efficiency of InAs/GaAs quantum dots (QDs) affected by proton implantation and subsequent annealing is investigated. The photoluminesce (PL) intensity is determined by the carrier capture time and non-radiative center (NRC) lifetime. The intermixing-induced carrier capture enhancement and the implantation-induced NRC generation mutually compete, so there exists a critical implantation dose (Phi c). When Phi is less than Phi c, the intermixing is the main effect and the PL intensity increases with Phi. On the other hand, when Phi is larger than Phi c, the implantation damage is so large that the intensity decreases with the dose. The higher the annealing temperature is, the larger Phi c becomes.

引用

页码：844 / 851

页数：8

共 25 条

[1] Extended coherent exciton states in quantum dot arrays [J].

Al-Ahmadi, AN ;

Ulloa, SE .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

[2] Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties:: Quantum dot intermixing [J].

Bhattacharyya, D ;

Helmy, AS ;

Bryce, AC ;

Avrutin, EA ;

Marsh, JH .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) :4619-4622

[3] Signatures of antibonding hole ground states in exciton spectra of vertically coupled quantum dots in an electric field [J].

Chwiej, T. ;

Szafran, B. .

PHYSICAL REVIEW B, 2010, 81 (07)

[4] Improved carrier collection in intermixed InGaAs/GaAs quantum wells [J].

Dao, LV ;

Johnston, MB ;

Gal, M ;

Fu, L ;

Tan, HH ;

Jagadish, C .

APPLIED PHYSICS LETTERS, 1998, 73 (23) :3408-3410

[5] Laser-induced InAs/GaAs quantum dot intermixing [J].

Dubowski, JJ ;

Allen, CN ;

Fafard, S .

APPLIED PHYSICS LETTERS, 2000, 77 (22) :3583-3585

[6] Intermixing in quantum-dot ensembles with sharp adjustable shells [J].

Fafard, S ;

Allen, CN .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2374-2376

[7] PASSIVATION OF INTERFACE DEFECTS IN LATTICE-MISMATCHED INGAAS/GAAS HETEROSTRUCTURES WITH HYDROGEN [J].

GAL, M ;

TAVENDALE, A ;

JOHNSON, MJ ;

USHER, BF .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :968-970

[8] Exciton Polarization, Fine-Structure Splitting, and the Asymmetry of Quantum Dots under Uniaxial Stress [J].

Gong, Ming ;

Zhang, Weiwei ;

Guo, Guang-Can ;

He, Lixin .

PHYSICAL REVIEW LETTERS, 2011, 106 (22)

[9] ROUGH VERSUS DILUTE INTERFACES IN SEMICONDUCTOR HETEROSTRUCTURES - THE ROLE OF GROWTH-CONDITIONS [J].

GRIESHABER, W ;

BODIN, C ;

CIBERT, J ;

GAJ, J ;

DAUBIGNE, YM ;

WASIELA, A ;

FEUILLET, G .

APPLIED PHYSICS LETTERS, 1994, 65 (10) :1287-1289

[10] Radiation hardness of InGaAs/GaAs quantum dots [J].

Guffarth, F ;

Heitz, R ;

Geller, M ;

Kapteyn, C ;

Born, H ;

Sellin, R ;

Hoffmann, A ;

Bimberg, D ;

Sobolev, NA ;

Carmo, MC .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1941-1943

← 1 2 3 →