On-chip fabrication of ZnO-nanowire gas sensor with high gas sensitivity

被引：313

作者：

Ahn, M. -W. ^{[1
]}

Park, K. -S. ^{[1
]}

Heo, J. -H. ^{[1
]}

Kim, D. -W. ^{[1
]}

Choi, K. J. ^{[1
]}

Park, J. -G. ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Nanomat Res Ctr, Seoul 130650, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2009年 / 138卷 / 01期

关键词：

ZnO nanowire; Gas sensor; NO2; On-chip fabrication; ROOM-TEMPERATURE; SENSING CHARACTERISTICS; SNO2; NANOWIRES; THIN-FILMS; OXIDE; NANOSENSORS; NO2; POWDERS;

D O I：

10.1016/j.snb.2009.02.008

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

ZnO-nanowire gas sensors were fabricated by a selective growth of nanowires on patterned Au catalysts thus forming nanowire air bridges or 'nanobridges' between two Pt pillar electrodes. The gas sensing properties of nanobridge gas sensors were demonstrated using a diluted NO2. The response, as a function of temperature, was highest at 225 degrees C and was linearly increased with the concentration of NO2 in the range of 0.5-3 ppm and then showed a sign of saturation. Our sensor showed higher response compared with different types of sensors including ZnO nanocrystals, Sn- and In-doped ZnO thin film, or ZnO nanowires. The enhanced response was attributed to the additional modulation of the sensor resistance due to potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire. Also nanobridge structure enabled fast recovery behavior because desorbed gas molecules can be easily swept away from the Surface of ZnO nanowire without re-adsorption. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：168 / 173

页数：6

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