Au-induced encapsulation of Ge nanowires in protective C shells

被引:42
|
作者
Sutter, Eli [1 ]
Sutter, Peter [1 ]
机构
[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
关键词
D O I
10.1002/adma.200600624
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In situ annealing experiments (in the temperature range between room temperature and 400 degrees C) in a transmission electron microscope show that Ge nanowires can be encapsulated in graphitic C shells in the presence of C (see figure) if the wire surface is decorated with small amounts of Au. The C shells are demonstrated to provide a protective barrier against nanowire oxidation even after prolonged exposure to ambient conditions.
引用
收藏
页码:2583 / +
页数:7
相关论文
共 50 条
  • [41] In-situ REM study of Au-induced faceting on Si(113) surface
    Kurahashi, N
    Minoda, H
    Tanishiro, Y
    Yagi, K
    SURFACE SCIENCE, 1999, 438 (1-3) : 91 - 96
  • [42] Charge-transfer transition in Au-induced quantum wires on Si(553)
    Edler, Frederik
    Miccoli, Ilio
    Pfnuer, Herbert
    Tegenkamp, Christoph
    PHYSICAL REVIEW B, 2019, 100 (04)
  • [43] STM and STS on single dopants and Au-induced chains at the Si(111) surface
    Sürgers, C
    Schöck, M
    Trappmann, T
    Von Löhneysen, H
    APPLIED SURFACE SCIENCE, 2003, 212 : 105 - 109
  • [44] Bi-and Au-induced reconstructions on GaAs(001)-2 ×4 surface
    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
    Chin. Phys. Lett., 2008, 8 (2977-2980):
  • [45] Analysis of mesoscopic patterns formed by the Au-induced faceting of vicinal Si(001)
    Heringdorf, Frank-Joachim Meyer zu
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (13) : S1 - S15
  • [46] Controlled Ge Nanowires Growth on Patterned Au Catalyst Substrate
    Li, C. B.
    Usami, K.
    Mizuta, H.
    Oda, S.
    2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 147 - +
  • [47] Formation of Quasi-Single-Crystal Ge on Plastic by Nucleation-Controlled Au-Induced Layer-Exchange Growth for Flexible Electronics
    Park, Jong-Hyeok
    Miyao, Masanobu
    Sadoh, Taizoh
    2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2014, : 291 - 294
  • [48] Au-induced reconstructions of the Si(111) surface with ordered and disordered domain walls
    Bondarenko, L., V
    Mihalyuk, A. N.
    Tupchaya, A. Y.
    Vekovshinin, Y. E.
    Gruznev, D., V
    Zotov, A., V
    Saranin, A. A.
    PHYSICAL REVIEW B, 2020, 101 (07)
  • [49] Au-Induced Low-Temperature (∼250°C) Crystallization of Si on Insulator Through Layer-Exchange Process
    Park, Jong-Hyeok
    Kurosawa, Masashi
    Kawabata, Naoyuki
    Miyao, Masanobu
    Sadoh, Taizoh
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (06) : H232 - H234
  • [50] Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics
    Sadoh, Taizoh
    Park, Jong-Hyeok
    Aoki, Rikuta
    Miyao, Masanobu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (03)