Au-induced encapsulation of Ge nanowires in protective C shells

被引：42

作者：

Sutter, Eli ^{[1
]}

Sutter, Peter ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 19期

关键词：

D O I：

10.1002/adma.200600624

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In situ annealing experiments (in the temperature range between room temperature and 400 degrees C) in a transmission electron microscope show that Ge nanowires can be encapsulated in graphitic C shells in the presence of C (see figure) if the wire surface is decorated with small amounts of Au. The C shells are demonstrated to provide a protective barrier against nanowire oxidation even after prolonged exposure to ambient conditions.

引用

页码：2583 / +

页数：7

共 25 条

[1]

BANHART F, 2003, PHYS REV LETT, V90, P185

[2] Growth and electrical transport of germanium nanowires [J].

Gu, G ;

Burghard, M ;

Kim, GT ;

Düsberg, GS ;

Chiu, PW ;

Krstic, V ;

Roth, S ;

Han, WQ .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) :5747-5751

[3] WHY GOLD IS THE NOBLEST OF ALL THE METALS [J].

HAMMER, B ;

NORSKOV, JK .

NATURE, 1995, 376 (6537) :238-240

[4] The influence of the surface migration of gold on the growth of silicon nanowires [J].

Hannon, JB ;

Kodambaka, S ;

Ross, FM ;

Tromp, RM .

NATURE, 2006, 440 (7080) :69-71

[5] Influence of surface states on electron transport through intrinsic Ge nanowires [J].

Hanrath, T ;

Korgel, BA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (12) :5518-5524

[6] Atomic-scale imaging of carbon nanofibre growth [J].

Helveg, S ;

López-Cartes, C ;

Sehested, J ;

Hansen, PL ;

Clausen, BS ;

Rostrup-Nielsen, JR ;

Abild-Pedersen, F ;

Norskov, JK .

NATURE, 2004, 427 (6973) :426-429

[7] Carbon encapsulated nanoparticles of Ni, Co, Cu, and Ti [J].

Jiao, J ;

Seraphin, S .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (05) :2442-2448

[8] Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si [J].

Kamins, TI ;

Williams, RS ;

Chen, Y ;

Chang, YL ;

Chang, YA .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :562-564

[9] Growth and structure of chemically vapor deposited Ge nanowires on Si substrates [J].

Kamins, TI ;

Li, X ;

Williams, RS .

NANO LETTERS, 2004, 4 (03) :503-506

[10]

Kingston R.H., 1957, Semiconductor Surface Physics

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