X-ray induced effects in the optical and thermal properties of a-Se1-x As x (x=0, 0.005, 0.06) doped with 0-220 ppm Cs

被引:8
作者
Jung, Yeonhee [1 ]
Gunes, Ozan [1 ]
Belev, George [1 ]
Koughia, Cyril [1 ]
Johanson, Robert [1 ]
Kasap, Safa [1 ]
机构
[1] Univ Saskatchewan, Dept Elect & Comp Engn, 57 Campus Dr, Saskatoon, SK S7N 5A9, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
ELECTRICAL BEHAVIOR; AMORPHOUS SELENIUM; CHARGE-TRANSPORT; THIN-FILMS; A-SE; CONSTANTS; ABSORPTION; THICKNESS; ALLOYS;
D O I
10.1007/s10854-017-6550-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical properties of vacuum deposited films of (a) pure a-Se (b) a-Se:0.5%As, (c) a-Se:6%As, (d) a-Se:6%As doped with Cs at the ppm level (140-220 ppm) have been measured from the transmission spectra over the range from the visible to the IR, covering 450-2500 nm. There is an increase in the refractive index of pure a-Se upon alloying with 6%As and a further increase with ppm-level Cs doping. There is a slight reduction in the bandgap with 6%As alloying. All four samples were subjected to x-irradiation at 30 and 70 kVp (21.56 and 37.6 keV average photon energies) with corresponding incident doses of 15.4 and 44.8 Gy in air. As a result of X-ray irradiation, there is an increase in the refractive index and a decrease in the film thickness (increase in the density), which confirms that the changes in n stem primarily from changes in the film density as expected from the Clasius-Mossotti equation. Upon the cessation of X-ray irradiation, n and d were observed to change, that is recover, towards their pre-exposure equilibrium values over a time scale of hours. After about 13 h of resting in the dark, n and d were found to have recovered to their equilibrium values within experimental errors. We also examined the time evolution of n, d, E (U) (Urbach bandgap) and delta E (Urbach width) when a-Se:6%As doped with ppm-level Cs is brought to 75 A degrees C, annealed there for 10 min and then brought back down to room temperature (23.5 A degrees C). It was found that n and d follow opposite trends as expected from the Clausius-Mossotti equation, that is, the changes in n stem primarily from changes in the density. There is an increase in d and a drop in n when the sample is annealed at 75 A degrees C. As soon as the sample is brought back to room temperature n and d slowly recover towards their equilibrium values and after a few hours, n and d values are indistinguishable from the original equilibrium values within experimental errors. Thus, n and d (or density) exhibit typical glass relaxation behavior. At 75 A degrees C, delta E is larger and E (U) is smaller. Upon cooling, both E (U) and delta E show relaxation towards their equilibrium values similarly to n and d. The Wemple-DiDomenico model was also used to model the refractive index dispersion data and the parameters E (o) and E (d) were determined for all the samples before and after 70 kVp irradiation. It was observed that there is a slight increase in E (d) upon X-ray irradiation for all the samples. The examination of the thermal stability of a-Se and a-Se:0.5%As films shows that even after very high doses, several thousands of Grays deposited into a-Se, the Hruby thermal stability coefficient is unaffected and there is no permanent deterioration in the stability.
引用
收藏
页码:7139 / 7150
页数:12
相关论文
共 43 条
  • [1] CHEMICAL MODIFICATION OF THE ELECTRICAL BEHAVIOR OF A-SE AND ITS ALLOYS - XEROGRAPHIC STUDIES
    ABKOWITZ, M
    JANSEN, F
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 953 - 956
  • [2] ELECTRICAL BEHAVIOR OF CHEMICALLY MODIFIED AMORPHOUS SE STUDIED BY XEROGRAPHIC DEPLETION DISCHARGE
    ABKOWITZ, M
    JANSEN, F
    MELNYK, AR
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (04): : 405 - 420
  • [3] Relaxation of the electrical properties of vacuum-deposited a-Se1-xAsx photoconductive films: Charge-carrier lifetimes and drift mobilities
    Allen, Chris
    Belev, George
    Johanson, Robert
    Kasap, Safa
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (05): : 1145 - 1156
  • [4] Amorphous selenium as an X-ray photoconductor
    Belev, G
    Kasap, SO
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 345 : 484 - 488
  • [5] Optical recording of surface relief on amorphous selenium
    Bohdan, R.
    Molnar, S.
    Csarnovics, I.
    Veres, M.
    Csik, A.
    Kokenyesi, S.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2015, 408 : 57 - 61
  • [6] Boone J.M., 2000, HDB MED IMAGING, P1, DOI [10.1117/3.832716.ch1, DOI 10.1117/3.832716.CH1]
  • [7] ELECTRONIC PROCESSES IN PHOTO-CRYSTALLIZATION OF VITREOUS SELENIUM
    DRESNER, J
    STRINGFELLOW, GB
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (02) : 303 - +
  • [8] EVALUATION OF GLASS-FORMING TENDENCY BY MEANS OF DTA
    HRUBY, A
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B, 1972, B 22 (11): : 1187 - &
  • [9] Vacuum deposited amorphous Se-Te photoconductor films: fractionation effects and charge transport in homogeneous films
    Juhasz, C
    Gembala, V
    Kasap, SO
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (09) : 633 - 641
  • [10] Kasap S., 2017, EXPT TECHNIQUES APPL