Diamond nucleation and growth by hot-filament CVD with in situ DC glow discharge at a lower deposition pressure

被引：4

作者：

Zhang, GF ^{[1
]}

Buck, V ^{[1
]}

机构：

[1] Univ Essen Gesamthsch, Fachbereich 7, D-45117 Essen, Germany

来源：

MATERIALS LETTERS | 1999年 / 41卷 / 05期

关键词：

diamond films; hot-filament CVD; low pressure;

D O I：

10.1016/S0167-577X(99)00140-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nucleation and growth of diamond films deposited by hot-filament chemical vapor deposition (CVD) with an in situ direct current glow discharge at a low pressure of 4 mbar have been investigated, The nucleation density of diamond films on mirror-polished silicon substrate can be enhanced at lower deposition pressure and is higher than that on mechanically polished substrates under the same conditions. In situ DC glow discharge improved the nucleation density of films, but did not contribute to the quality of films. The nucleation density increased with increasing discharge voltage, then sharply decreased when the voltage is over 400 V. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：261 / 265

页数：5

共 18 条

[1] Discharge induced enhancement of diamond nucleation on Si via hot filament chemical vapor deposition [J].

Cui, JB ;

Shang, NG ;

Fang, RC .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6072-6075

[2] COMPARISON OF (CH4-O-2)-H-2 AND CO-H-2 PLASMAS FOR LOW-TEMPERATURE DIAMOND FILM DEPOSITION BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION [J].

EDDY, CR ;

YOUCHISON, DL ;

SARTWELL, BD .

[3] Dynamic growth effects during low-pressure deposition of diamond films [J].

Gilbert, DR ;

Singh, R ;

Clarke, R ;

Murugkar, S .

APPLIED PHYSICS LETTERS, 1997, 70 (15) :1974-1976

[4] Novel in situ production of smooth diamond films [J].

Gilbert, DR ;

Lee, DG ;

Singh, RK .

JOURNAL OF MATERIALS RESEARCH, 1998, 13 (07) :1735-1737

[5] Formation of the precursor for diamond growth by in situ direct current glow discharge pretreatment [J].

Gouzman, I ;

Lior, I ;

Hoffman, A .

APPLIED PHYSICS LETTERS, 1998, 72 (03) :296-298

[6] Nanosize diamond formation promoted by direct current glow discharge process: Synchrotron radiation and high resolution electron microscopy studies [J].

Gouzman, I ;

Hoffman, A ;

Comtet, G ;

Hellner, L ;

Dujardin, G ;

Petravic, M .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2517-2519

[7] Diamond film orientation by ion bombardment during deposition [J].

Jiang, X ;

Zhang, WJ ;

Paul, M ;

Klages, CP .

APPLIED PHYSICS LETTERS, 1996, 68 (14) :1927-1929

[8] Pressure effect on diamond nucleation in a hot-filament CVD system [J].

Lee, ST ;

Lam, YW ;

Lin, ZD ;

Chen, Y ;

Chen, QJ .

PHYSICAL REVIEW B, 1997, 55 (23) :15937-15941

[9] EVIDENCE OF AN ENERGETIC ION-BOMBARDMENT MECHANISM FOR BIAS-ENHANCED NUCLEATION OF DIAMOND [J].

MCGINNIS, SP ;

KELLY, MA ;

HAGSTROM, SB .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3117-3119

[10] Bias-enhanced nucleation of diamond on molybdenum: A photoelectron spectroscopy study of the initial stages of the growth process [J].

Reinke, P ;

Oelhafen, P .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2612-2617

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