Direct visualization of magnetic-field-induced magnetoelectric switching in multiferroic aurivillius phase thin films

被引:36
作者
Faraz, Ahmad [1 ]
Maity, Tuhin [1 ]
Schmidt, Michael [1 ]
Deepak, Nitin [1 ]
Roy, Saibal [1 ]
Pemble, Martyn E. [1 ,2 ]
Whatmore, Roger W. [2 ,3 ]
Keeney, Lynette [1 ]
机构
[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[2] Univ Coll Cork, Dept Chem, Cork, Ireland
[3] Imperial Coll London, Dept Mat, Fac Engn, London, England
基金
爱尔兰科学基金会;
关键词
ferroelectricity/ferroelectric materials; ferromagnetism/ferromagnetic materials; magnetoelectrics; multiferroics; thin films; ROOM-TEMPERATURE; EPITAXIAL-FILMS; EXCHANGE BIAS; ELECTROMECHANICS; FERROMAGNETISM; POLARIZATION; ENHANCEMENT; BIFEO3; OXIDES;
D O I
10.1111/jace.14597
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters could provide a means for data storage whereby bits could be written electrically and read magnetically, or vice versa. Thin films of Aurivillius phase Bi6Ti2.8Fe1.52Mn0.68O18, previously prepared by a chemical solution deposition (CSD) technique, are multiferroics demonstrating magnetoelectric coupling at room temperature. Here, we demonstrate the growth of a similar composition, Bi6Ti2.99Fe1.46Mn0.55O18, via the liquid injection chemical vapor deposition technique. High-resolution magnetic measurements reveal a considerably higher in-plane ferromagnetic signature than CSD grown films (M-S=24.25emu/g (215emu/cm(3)), M-R=9.916emu/g (81.5emu/cm(3)), H-C=170Oe). A statistical analysis of the results from a thorough microstructural examination of the samples, allows us to conclude that the ferromagnetic signature can be attributed to the Aurivillius phase, with a confidence level of 99.95%. In addition, we report the direct piezoresponse force microscopy visualization of ferroelectric switching while going through a full in-plane magnetic field cycle, where increased volumes (8.6% to 14% compared with 4% to 7% for the CSD-grown films) of the film engage in magnetoelectric coupling and demonstrate both irreversible and reversible magnetoelectric domain switching.
引用
收藏
页码:975 / 987
页数:13
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