ESD Protection Design for High-Speed Circuits in Nanoscale CMOS Process

被引：0
|
作者：
Lin, Chun-Yu [1 ]
Chang, Rong-Kun [1 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC) | 2016年
关键词：
CMOS; electrostatic discharge ( ESD) protection; high-speed circuits; RECEIVER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To protect the high-speed integrated circuits from electrostatic discharge (ESD) damages, the ESD protection design of inductor-assisted silicon-controlled rectifier (LASCR) is investigated in this work. Compared with the conventional ESD protection design of dual-diode, the LASCR has better high-speed performances and higher ESD robustness. Therefore, the LASCR is very suitable for high-speed applications.
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页数：4
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