Controlled axial and radial growth of InP nanowires by metal-organic molecular beam epitaxy using the selective-area vapor-liquid-solid approach

被引：3

作者：

Haider, Nripendra N. ^{[1
]}

Kelrich, Alexander ^{[1
]}

Cohen, Shimon ^{[1
]}

Ritter, Dan ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Elect Engn Fac, IL-32000 Haifa, Israel

来源：

NANOTECHNOLOGY | 2018年 / 29卷 / 41期

关键词：

wurtzite InP; nanowire; metal-organic molecular beam epitaxy; selective-area VLS; photoluminescence;

D O I：

10.1088/1361-6528/aad584

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlling the transition from axial to radial growth is essential for advanced III-V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor-liquid-solid method during metal-organic molecular beam epitaxy. An optimized growth procedure for axial to radial switching was obtained, maintaining the pure wurtzite crystal phase of the NWs.

引用

页数：6

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