Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

被引：36

作者：

Bietti, Sergio ^{[1
,2
]}

Somaschini, Claudio ^{[1
,2
]}

Esposito, Luca ^{[1
,2
]}

Fedorov, Alexey ^{[3
,4
]}

Sanguinetti, Stefano ^{[1
,2
]}

机构：

[1] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] L NESS, I-22100 Como, Italy

[4] CNR IFN, I-22100 Como, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 11期

关键词：

MOLECULAR-BEAM EPITAXY; ENERGY ELECTRON-DIFFRACTION; III-V COMPOUNDS; GROWTH; GAAS(001); OSCILLATIONS; NUCLEATION; MICROSCOPY; ADATOM;

D O I：

10.1063/1.4895986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano-disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E-A = 1.31 +/- 0.15 eV, a diffusivity prefactor of D-0 = 0.53(x2.1 +/- 1) cm(2) s(-1) that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad-atoms on III-V crystal surfaces and the fabrication of designable nanostructures. (C) 2014 AIP Publishing LLC.

引用

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