Critical relative indentation depth in carbon based thin films

被引:4
作者
Bartali, Ruben [1 ]
Vaccari, Alessandro [1 ]
Micheli, Victor [1 ]
Gottardi, Gloria [1 ]
Pandiyan, Rajesh [1 ]
Collini, Amos [1 ]
Lori, Paolo [1 ]
Coser, Gianni [1 ]
Laidani, Nadhira [1 ]
机构
[1] Fdn Bruno Kessler Ric Sci & Tecnol, Ctr Mat & Microsyst, I-38050 Povo, Trento, Italy
关键词
Nanoindentation; Carbon film; Critical relative indentation depth; W-e/W-t; HARDNESS; NANOINDENTATION; SUBSTRATE;
D O I
10.1016/j.pnsc.2014.05.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thin film hardness estimation by nanoindentation is influenced by substrate beyond a critical relative indentation depth (CRID). In this study we developed a methodology to identify the CRID in amorphous carbon film. Three types of amorphous carbon film deposited on silicon have been studied. The nanoindentation tests were carried out applying a 0.1-10 mN load range on a Berkovich diamond tip, leading to penetration depth-to-film thickness ratios of 8-100%. The work regained during unloading (W-e) and the work performed during loading (W-t) was estimated for each indentation. The trend af unload-to-load ratio (W-e/W-t) data as a function of depth has been studied. W-e/W-t depth profiles showed a sigmoid trend and the data were fitted by means of a Ilill sigmoid equation. Using Ilill sigmoid fit and a simple analytical method it is possible to estimate CRID of carbon based films. (c) 2014 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
引用
收藏
页码:287 / 290
页数:4
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