ZnO nanobelts grown on Si substrate

被引:213
作者
Li, YB [1 ]
Bando, Y [1 ]
Sato, T [1 ]
Kurashima, K [1 ]
机构
[1] Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.1492008
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using infrared irradiation to heat an industrial brass (Cu-Zn alloy) disk in moderate vacuum, ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal hexagonal structure and grew along the [0001] direction. The nanobelts had two distinct widths along their entire length. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at 379 nm. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices. (C) 2002 American Institute of Physics.
引用
收藏
页码:144 / 146
页数:3
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