Piezoelectrically enhanced exchange bias in multiferroic heterostructures

被引：7

作者：

Kim, Tae Y. ^{[1
,2
]}

Song, Seungwoo ^{[1
,2
]}

Jang, Hyun M. ^{[1
,2
,3
]}

Peters, John A. ^{[4
]}

Jeong, Young K. ^{[4
,5
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci AMS, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 790784, South Korea

[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[5] Samsung Elect Co Ltd, Memory Mfg Operat Ctr, Hwaseong Si 449711, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 38期

基金：

新加坡国家研究基金会;

关键词：

ELECTRIC CONTROL; FIELD;

D O I：

10.1039/c4tc01337a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a multiferroic tri-layer structure in which two magnetic layers are epitaxially constrained on a bottom piezoelectric substrate. In this structure, the exchange bias is observed due to interface spin coupling between the two magnetic layers. We also show that the exchange bias is significantly modulated by the application of an external electric field at room temperature, and the modulation in exchange bias is reproducible and reversible.

引用

页码：8018 / 8022

页数：5

共 26 条

[1] Magnetoelectric switching of exchange bias [J].