ErAs as a transparent contact at 1.55 μm

被引:20
作者
Hanson, M. P. [1 ]
Gossard, A. C.
Brown, E. R.
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2354038
中图分类号
O59 [应用物理学];
学科分类号
摘要
An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55 mu m. The semitransparent window extends from similar to 1.5 to 2.3 mu m. These films were found to have resistivities less than 7x10(-5) Omega cm and permit similar to 85% transmission for a 150 nm film and similar to 97% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 mu m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 mu m. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region. (c) 2006 American Institute of Physics.
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页数:3
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