ErAs as a transparent contact at 1.55 μm

被引：20

作者：

Hanson, M. P. ^{[1
]}

Gossard, A. C.

Brown, E. R.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2354038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55 mu m. The semitransparent window extends from similar to 1.5 to 2.3 mu m. These films were found to have resistivities less than 7x10(-5) Omega cm and permit similar to 85% transmission for a 150 nm film and similar to 97% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 mu m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 mu m. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region. (c) 2006 American Institute of Physics.

引用

页数：3

共 18 条

[1] MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS [J].

ALLEN, SJ ;

TABATABAIE, N ;

PALMSTROM, CJ ;

MOUNIER, S ;

HULL, GW ;

SANDS, T ;

DEROSA, F ;

GILCHRIST, HL ;

GARRISON, KC .

SURFACE SCIENCE, 1990, 228 (1-3) :13-15

[2] IN0.53GA0.47AS P-I-N PHOTODIODES WITH TRANSPARENT CADMIUM TIN OXIDE CONTACTS [J].

BERGER, PR ;

DUTTA, NK ;

ZYDZIK, G ;

OBRYAN, HM ;

KELLER, U ;

SMITH, PR ;

LOPATA, J ;

SIVCO, D ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1992, 61 (14) :1673-1675

[3] Search for improved transparent conducting oxides:: A fundamental investigation of CdO, Cd2SnO4, and Zn2SnO4 [J].

Coutts, TJ ;

Young, DL ;

Li, X ;

Mulligan, WP ;

Wu, X .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (06) :2646-2660

[4] Transparent and conducting ITO films:: new developments and applications [J].

Granqvist, CG ;

Hultåker, A .

THIN SOLID FILMS, 2002, 411 (01) :1-5

[5] EPITAXIAL-GROWTH OF METALLIC ERP, ERSB AND LATTICE-MATCHED ERPXSB(1-X) LAYERS ON (001)INP AND (001)GAAS [J].

GUIVARCH, A ;

CAULET, J ;

LECORRE, A .

ELECTRONICS LETTERS, 1989, 25 (16) :1050-1052

[6] Electronic structure of ErAs(100) [J].

Komesu, T ;

Jeong, HK ;

Choi, J ;

Borca, CN ;

Dowben, PA ;

Petukhov, AG ;

Schultz, BD ;

Palmstrom, CJ .

PHYSICAL REVIEW B, 2003, 67 (03)

[7] Spin-orbit effects on the band structure and Fermi surface of ErAs and ErxSc1-xAs [J].

Lambrecht, WRL ;

Segall, B ;

Petukhov, AG ;

Bogaerts, R ;

Herlach, F .

PHYSICAL REVIEW B, 1997, 55 (15) :9239-9242

[8]

Meng Y, 2001, THIN SOLID FILMS, V394, P219

[9] EPITAXIAL-GROWTH OF ERAS ON (100)GAAS [J].

PALMSTROM, CJ ;

TABATABAIE, N ;

ALLEN, SJ .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2608-2610

[10] EPITAXY OF DISSIMILAR MATERIALS [J].

PALMSTROM, CJ .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1995, 25 :389-415

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