Diameter distribution control of single-walled carbon nanotubes by etching ferritin nanoparticles

被引：4

作者：

Zou, Yuan ^{[1
,2
,3
]}

Li, Qunqing ^{[1
,2
,3
]}

Liu, Junku ^{[1
,2
,3
]}

Jin, Yuanhao ^{[1
,2
,3
]}

Liu, Yi ^{[4
]}

Qian, Qingkai ^{[1
,2
,3
]}

Jiang, Kaili ^{[1
,2
,3
]}

Fan, Shoushan ^{[1
,2
,3
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China

[4] Hainan Nucl Power Co Ltd, Hainan 570105, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 05期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH; CATALYST;

D O I：

10.7567/APEX.7.055102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We focused on controlling the diameter of single-walled carbon nanotubes (SWNTs) by controlling the ferritin catalyst diameter using reactive ion etching (RIE). The average diameter of ferritin decreased by about 26.5% upon RIE treatment, which resulted in the decrease of the mean diameter of the SWNTs by about 34% with a small diameter distribution. This was demonstrated by both atomic force microscopic and Raman spectroscopic measurements. We found that the current on/off ratio of the SWNT thin film transistors was significantly improved after the catalyst treatment. It was estimated that the purity of the semiconducting SWNT also increased from 58.8 to 92.4%. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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