Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

被引：336

作者：

Zhou, Dayu ^{[1
,2
,3
]}

Xu, Jin ^{[4
]}

Li, Qing ^{[1
]}

Guan, Yan ^{[1
]}

Cao, Fei ^{[5
]}

Dong, Xianlin ^{[5
]}

Mueller, Johannes ^{[6
]}

Schenk, Tony ^{[7
]}

Schroeder, Uwe ^{[7
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Elect Beams, Minist Educ, Dalian 116024, Peoples R China

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[4] Dalian Neusoft Univ Informat, Dept Elect Engn, Dalian 116023, Peoples R China

[5] Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[6] Fraunhofer IPMS CNT, D-01109 Dresden, Germany

[7] Tech Univ Dresden, Namlab gGmbH, D-01187 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 19期

关键词：

CAPACITORS; RETENTION; FATIGUE;

D O I：

10.1063/1.4829064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.

引用

页数：4

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