Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

被引：23

作者：

Bom, N. M. ^{[1
,2
]}

Oliveira, M. H., Jr. ^{[1
]}

Soares, G. V. ^{[3
]}

Radtke, C. ^{[4
]}

Lopes, J. M. J. ^{[1
]}

Riechert, H. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Fed Rio Grande do Sul, PGMICRO, BR-91509900 Porto Alegre, RS, Brazil

[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[4] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

来源：

CARBON | 2014年 / 78卷

关键词：

SILICON-CARBIDE; BILAYER GRAPHENE; BUFFER LAYER; INTERFACE OXIDATION; WATER-VAPOR; INTERCALATION; TRANSISTORS; PRESSURE;

D O I：

10.1016/j.carbon.2014.07.006

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The conversion of monolayer graphene grown epitaxially on SiC(0001) into quasi-free standing bilayer graphene (QFSBG) can be achieved by decoupling the buffer layer (BL) from the substrate via an annealing step. We investigated the role of O-2 and H2O (possible agents of this process) by varying the annealing atmosphere and time. Raman spectroscopy reveals a synergistic effect of O-2 and H2O, which promotes a complete BL detachment and thus large-area QFSBG formation. Similar results are obtained in a H2O-rich ambient for longer annealing times. X-ray photoelectron spectroscopy (XPS) revealed that in both cases the observed effect is related to the formation of an oxide layer on the SiC surface during annealing. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：298 / 304

页数：7

共 51 条

[1] Dissociative adsorption of water at vacancy defects in graphite
Cabrera-Sanfelix, Pepa
Darling, George R.
[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (49) : 18258 - 18263
[2] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect
Castro, Eduardo V.
Novoselov, K. S.
Morozov, S. V.
Peres, N. M. R.
Dos Santos, J. M. B. Lopes
Nilsson, Johan
Guinea, F.
Geim, A. K.
Castro Neto, A. H.
[J]. PHYSICAL REVIEW LETTERS, 2007, 99 (21)
[3] The electronic properties of graphene
Castro Neto, A. H.
Guinea, F.
Peres, N. M. R.
Novoselov, K. S.
Geim, A. K.
[J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
[4] Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
de Heer, Walt A.
Berger, Claire
Ruan, Ming
Sprinkle, Mike
Li, Xuebin
Hu, Yike
Zhang, Baiqian
Hankinson, John
Conrad, Edward
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2011, 108 (41) : 16900 - 16905
[5] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
Elias, D. C.
Nair, R. R.
Mohiuddin, T. M. G.
Morozov, S. V.
Blake, P.
Halsall, M. P.
Ferrari, A. C.
Boukhvalov, D. W.
Katsnelson, M. I.
Geim, A. K.
Novoselov, K. S.
[J]. SCIENCE, 2009, 323 (5914) : 610 - 613
[6] Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
Emtsev, K. V.
Speck, F.
Seyller, Th.
Ley, L.
Riley, J. D.
[J]. PHYSICAL REVIEW B, 2008, 77 (15):
[7] Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation
Emtsev, Konstantin V.
Zakharov, Alexei A.
Coletti, Camilla
Forti, Stiven
Starke, Ulrich
[J]. PHYSICAL REVIEW B, 2011, 84 (12)
[8] Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
[9] Raman spectrum of graphene and graphene layers
Ferrari, A. C.
Meyer, J. C.
Scardaci, V.
Casiraghi, C.
Lazzeri, M.
Mauri, F.
Piscanec, S.
Jiang, D.
Novoselov, K. S.
Roth, S.
Geim, A. K.
[J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
[10] Epitaxial Graphenes on Silicon Carbide
First, Phillip N.
de Heer, Walt A.
Seyller, Thomas
Berger, Claire
Stroscio, Joseph A.
Moon, Jeong-Sun
[J]. MRS BULLETIN, 2010, 35 (04) : 296 - 305

← 1 2 3 4 5 6 →