Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces

被引：26

作者：

Chen, Zhiyi ^{[1
]}

Garcia, Thor Axtmann ^{[1
]}

De Jesus, Joel ^{[1
]}

Zhao, Lukas ^{[1
]}

Deng, Haiming ^{[1
]}

Secor, Jeff ^{[1
]}

Begliarbekov, Milan ^{[1
]}

Krusin-Elbaum, Lia ^{[1
]}

Tamargo, Maria C. ^{[1
]}

机构：

[1] CUNY City Coll, New York, NY 10031 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 04期

基金：

美国国家科学基金会;

关键词：

TI; MBE; Bi2Se3; SINGLE DIRAC CONE; THIN-FILMS; BI2TE3; SB2TE3; RAMAN;

D O I：

10.1007/s11664-013-2890-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth of high-quality Bi2Se3 films is crucial not only for study of topological insulators but also for manufacture of technologically important materials. We report a study of the heteroepitaxy of single-crystal Bi2Se3 thin films grown on GaAs and InP substrates by use of molecular beam epitaxy. Surface topography, crystal structure, and electrical transport properties of these Bi2Se3 epitaxial films are indicative of highly c-axis oriented films with atomically sharp interfaces.

引用

收藏

页码：909 / 913

页数：5

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