High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

被引：13

作者：

Singh, Tejinder ^{[1
]}

Khaira, Navjot ^{[1
]}

机构：

[1] Lovely Profess Univ, Dept Elect & Commun Engn, Phagwara 144402, India

来源：

SCIENTIFIC WORLD JOURNAL | 2014年

关键词：

D O I：

10.1155/2014/605894

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

引用

页数：7

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