Origin of type-C defects on the Si(100)-(2x1) surface -: art. no. 161302

被引：35

作者：

Nishizawa, M

Yasuda, T

Yamasaki, S

Miki, K

Shinohara, M

Kamakura, N

Kimura, Y

Niwano, M

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058561, Japan

[2] JRCAT, Tsukuba, Ibaraki 3058562, Japan

[3] ASRC, Tsukuba, Ibaraki 3058562, Japan

[4] Nanotechnol Inst, Tsukuba, Ibaraki 3058568, Japan

[5] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.65.161302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The generation processes of type-C defects on the Si(100)-(2x1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H2O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.

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页数：4

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