Directed Branch Growth in Aligned Nanowire Arrays

被引:18
作者
Beaudry, Allan L. [1 ]
LaForge, Joshua M. [1 ]
Tucker, Ryan T. [1 ]
Sorge, Jason B. [1 ]
Adamski, Nicholas L. [1 ]
Li, Peng [2 ]
Taschuk, Michael T. [1 ]
Brett, Michael J. [1 ,2 ]
机构
[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada
[2] NRC Natl Inst Nanotechnol, Edmonton, AB T6G 2M9, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Branched nanowire; nanotrees; epitaxy; vapor-liquid-solid; glancing angle deposition; indium tin oxide; SEMICONDUCTOR NANOWIRES; OXIDE-FILMS; ELECTRICAL-PROPERTIES; VLS GROWTH; WHISKERS; TRANSISTORS; SILICON; MECHANISM; NANOSTRUCTURES; CIRCUITS;
D O I
10.1021/nl404377v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowire arrays using vapor-liquid-solid glancing angle deposition (VLS-GLAD) flux engineering. In this work, a dynamically controlled collimated vapor flux guides branch placement during the self-catalyzed epitaxial growth of branched indium tin oxide nanowire arrays. The flux is positioned to grow branches on select nanowire facets, enabling fabrication of aligned nanotree arrays with L-, T-, or X-branching. In addition, a flux motion algorithm is designed to selectively elongate branches along one in-plane axis. Nanotrees are found to be aligned across large areas by X-ray diffraction pole figure analysis and through branch length and orientation measurements collected over 140 mu m(2) from scanning electron microscopy images for each array. The pathway to guided assembly of nanowire architectures with controlled interconnectivity in three-dimensions using VLS-GLAD is discussed.
引用
收藏
页码:1797 / 1803
页数:7
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