Design of an optimised readout architecture for phase-change probe memory using Ge2Sb2Te5 media

被引：6
|
作者：
Wang, Lei [1 ]
Wright, C. David [2 ]
Aziz, Mustafa M. [2 ]
Yang, Ci-Hui [1 ]
Yang, Guo-Wei [1 ]
机构：
[1] Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Peoples R China
[2] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 02期
基金：
英国工程与自然科学研究理事会; 中国国家自然科学基金;
关键词：
FILMS;
D O I：
10.7567/JJAP.53.028002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Phase-change probe memory has recently received considerable attention on its writing performance, while its readout performance is rarely evaluated. Therefore, a three-dimensional readout model has been developed for the first time to calculate the reading contrast by varying the electrical conductivities and the thickness of the capping and under layers as well as the thickness of the Ge2Sb2Te5 layer. It is found that a phase-change probe architecture, consisting of a 10 nm Ge2Sb2Te5 layer sandwiched by a 2 nm, 50 Omega(-1) m(-1) capping layer and a 40 nm, 5 x 10(6) Omega(-1) m(-1) under layer, has the capability of providing the optimal readout performance. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Photoassisted amorphization of the phase-change memory alloy Ge2Sb2Te5
    Fons, P.
    Osawa, H.
    Kolobov, A. V.
    Fukaya, T.
    Suzuki, M.
    Uruga, T.
    Kawamura, N.
    Tanida, H.
    Tominaga, J.
    PHYSICAL REVIEW B, 2010, 82 (04):
  • [2] Crystallization of Ge2Sb2Te5 phase-change optical disk media
    Liu, B
    Ruan, H
    Gan, FX
    CHINESE PHYSICS, 2002, 11 (03): : 293 - 297
  • [3] THERMOELECTRIC CHARACTERIZATION OF Ge2Sb2Te5 FILMS FOR PHASE-CHANGE MEMORY
    Lee, Jaeho
    Kodama, Takashi
    Won, Yoonjin
    Asheghi, Mehdi
    Goodson, Kenneth E.
    PROCEEDINGS OF THE ASME MICRO/NANOSCALE HEAT AND MASS TRANSFER INTERNATIONAL CONFERENCE, 2012, 2012, : 687 - 693
  • [4] Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory
    Park, Jong-Bong
    Park, Gyeong-Su
    Baik, Hion-Suck
    Lee, Jang-Ho
    Jeong, Hongsik
    Kim, Kinam
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) : H139 - H141
  • [5] Dislocations in phase-change Ge2Sb2Te5 alloy
    Zhang, Wei
    Song, Se Ahn
    Jeong, Hong Sik
    Kim, Jin Gyu
    Kim, Youn-Joong
    ADVANCED MATERIALS AND PROCESSING, 2007, 26-28 : 1097 - +
  • [6] Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
    Senkader, S
    Wright, CD
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 504 - 511
  • [7] Compatibility study of Ti and Ge2Sb2Te5 for phase-change memory applications
    Venugopal, V. A.
    Ottaviani, G.
    Tonini, R.
    Bersani, M.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 167 (07): : 487 - 495
  • [8] Critical quenching speed determining phase of Ge2Sb2Te5 in phase-change memory
    Suh, D. -S.
    Kim, K. H. P.
    Noh, J. -S.
    Shin, W. -C.
    Kang, Y. -S.
    Kim, C.
    Khang, Y.
    Yoo, I. K.
    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 527 - +
  • [9] Thermal conductivity of phase-change material Ge2Sb2Te5
    Lyeo, Ho-Ki
    Cahill, David G.
    Lee, Bong-Sub
    Abelson, John R.
    Kwon, Min-Ho
    Kim, Ki-Bum
    Bishop, Stephen G.
    Cheong, Byung-ki
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [10] Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application
    Zhou, Xilin
    Xia, Mengjiao
    Rao, Feng
    Wu, Liangcai
    Li, Xianbin
    Song, Zhitang
    Feng, Songlin
    Sun, Hongbo
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (16) : 14207 - 14214
12345