7.72 ppm/°C, Ultralow Power, High PSRR CMOS Bandgap Reference Voltage

被引:0
作者
Hamouda, Assia [1 ]
Arnold, Ruediger [1 ]
Manck, Otto [1 ]
Bouguechal, Nour-Eddine [2 ]
机构
[1] Tech Univ Berlin, Inst Tech Informat & Mikroelekt, Berlin, Germany
[2] Univ Batna, Lab Elect Avancee, Batna, Algeria
来源
2013 IFIP/IEEE 21ST INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC) | 2013年
关键词
Bandgap reference voltage; temperature coefficient; ultralow power; PSRR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a CMOS bandgap reference fabricated in 0.18 mu m TSMC CMOS technology, with ultralow power consumption, high Power Supply Rejection Ratio (PSRR) and less temperature drift over wide temperature range. This is achieved by using a straightforward 3 bits trimming circuit design includes high ohmic polysilicon unit resistors to save area and 8 to 1 multiplexer digitally controlled to switch between the 8 different outputs. The performance of the design was verified experimentally. The implemented bandgap reference voltage measured has showed a temperature coefficient of 7.72 ppm/degrees C over temperature range of -40 degrees C to 125 degrees C on wide supply voltage from 2.6V to 4V and consumes a supply current of 1.054 mu A at 4V, PSRR of -62dB at 1GHz are easily achieved, which make it widely applicable in portable equipment. The active area of the circuit is 0.1 mm(2).
引用
收藏
页码:364 / 367
页数:4
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