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Photoluminescence analysis of InAlAs-InGaAs HFET material with varied placement of heavy delta-doping
被引：2
|作者：
Leitch, WE
Henle, BU
Kohn, E
机构：
[1] Dept. of Electron Devices and Circt., University of Ulm
关键词：
heterojunction field effect transistor (HFET);
high electron mobility transistor (HEMT);
InAlAs;
InGaAs;
InP;
photoluminescence (PL);
D O I：
10.1007/BF02655592
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Low temperature photoluminescence (PL) has been used to characterize InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) structure material. A phenomenological lineshape model has been applied to the PL spectrum to derive energy levels and the position of the Fermi-energy and hence the channel carrier concentration. The data is compared with results from low-temperature Hall and Shubnikov-de Hans (SdH) measurements, and fit with a charge-control model of the conduction band. Values for the sheet density are derived from PL for channel-doped structures where SdH measurements are difficult. Changes in the quantum well symmetry through variations in the dopant distribution are shown to be reflected in the PL lineshape.
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页码：1652 / 1659
页数：8
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