Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers

被引：11

作者：

Qiao, Q. ^{[1
]}

Xu, D. ^{[1
]}

Li, Y. W. ^{[1
]}

Zhang, J. Z. ^{[1
]}

Hu, Z. G. ^{[1
]}

Chu, J. H. ^{[1
,2
]}

机构：

[1] East China Normal Univ, MOE, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

THIN SOLID FILMS | 2017年 / 623卷

基金：

中国国家自然科学基金;

关键词：

Non-polar resistive switching; Transition metal oxide; Sandwich structure; Buffer layer; DENSITY MEMORY APPLICATION; RANDOM-ACCESS MEMORY; ZNO FILMS; DEVICE; LAYER; TEMPERATURE; OXIDE; ZRO2; RRAM;

D O I：

10.1016/j.tsf.2016.12.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The single ZnO layer and a sandwich Al2O3/ZnO/Al2O3 structure were prepared via atomic layer deposition, and the single ZnO layer showed a feature of ohmic conduction only. When we added that together with top and bottom alumina buffers, a non-polar resistive switching (RS) behavior was accomplished, allowing investigation of its electric endurance and retention characteristics. Analysis of the conduction mechanism at both high and low resistance states using auxiliary mathematic tools resulted in the proposed model of conducting filaments formed in the insulating Al2O3 buffers. The effect of stopping voltage Vend on the resistance window at high resistance state is studied and discussed. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：8 / 13

页数：6

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