High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology

被引：10

作者：

Lin, Shaobing ^{[1
,2
]}

Zhang, Xiaowei ^{[1
,2
,3
]}

Zhang, Pei ^{[1
,2
,4
]}

Tan, Dameng ^{[1
,2
]}

Xu, Jun ^{[1
,2
]}

Li, Wei ^{[1
,2
]}

Chen, Kunji ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Zhengzhou Univ Light Ind, Dept Elect & Informat Engn, Henan Key Lab Informat Based Elect Appliances, Zhengzhou 450002, Peoples R China

来源：

OPTICS LETTERS | 2016年 / 41卷 / 03期

基金：

中国国家自然科学基金;

关键词：

TIME-RESOLVED PHOTOLUMINESCENCE; NONLINEAR-OPTICAL PROPERTIES; SNO2; NANOCRYSTALS; ENERGY-TRANSFER; SILICA FILMS; LUMINESCENCE; LASERS;

D O I：

10.1364/OL.41.000630

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved sigma(em) x tau of up to 4.2 x 10(-23) cm(2) s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration. (C) 2016 Optical Society of America

引用

页码：630 / 633

页数：4

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