High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology

被引：10
作者：
Lin, Shaobing [1 ,2 ]
Zhang, Xiaowei [1 ,2 ,3 ]
Zhang, Pei [1 ,2 ,4 ]
Tan, Dameng [1 ,2 ]
Xu, Jun [1 ,2 ]
Li, Wei [1 ,2 ]
Chen, Kunji [1 ,2 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Zhengzhou Univ Light Ind, Dept Elect & Informat Engn, Henan Key Lab Informat Based Elect Appliances, Zhengzhou 450002, Peoples R China
来源：
OPTICS LETTERS | 2016年 / 41卷 / 03期
基金：
中国国家自然科学基金;
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; NONLINEAR-OPTICAL PROPERTIES; SNO2; NANOCRYSTALS; ENERGY-TRANSFER; SILICA FILMS; LUMINESCENCE; LASERS;
D O I：
10.1364/OL.41.000630
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved sigma(em) x tau of up to 4.2 x 10(-23) cm(2) s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration. (C) 2016 Optical Society of America
引用
收藏
页码：630 / 633
页数：4
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