High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology

被引：10
作者：
Lin, Shaobing [1 ,2 ]
Zhang, Xiaowei [1 ,2 ,3 ]
Zhang, Pei [1 ,2 ,4 ]
Tan, Dameng [1 ,2 ]
Xu, Jun [1 ,2 ]
Li, Wei [1 ,2 ]
Chen, Kunji [1 ,2 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Zhengzhou Univ Light Ind, Dept Elect & Informat Engn, Henan Key Lab Informat Based Elect Appliances, Zhengzhou 450002, Peoples R China
来源：
OPTICS LETTERS | 2016年 / 41卷 / 03期
基金：
中国国家自然科学基金;
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; NONLINEAR-OPTICAL PROPERTIES; SNO2; NANOCRYSTALS; ENERGY-TRANSFER; SILICA FILMS; LUMINESCENCE; LASERS;
D O I：
10.1364/OL.41.000630
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved sigma(em) x tau of up to 4.2 x 10(-23) cm(2) s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration. (C) 2016 Optical Society of America
引用
收藏
页码：630 / 633
页数：4
相关论文
共 33 条
  • [1] Efficient near-infrared luminescence and energy transfer in erbium/bismuth codoped zeolites
    Bai, Zhenhua
    Sun, Hong-Tao
    Hasegawa, Takashi
    Fujii, Minoru
    Shimaoka, Fumiaki
    Miwa, Yuji
    Mizuhata, Minoru
    Hayashi, Shinji
    [J]. OPTICS LETTERS, 2010, 35 (11) : 1926 - 1928
  • [2] Quantum-confined photoluminescence from Ge1-xSnx/Ge superlattices on Ge-buffered Si(001) substrates
    Chang, Guo-En
    Hsieh, Wen-Yao
    Chen, Jia-Zhi
    Cheng, Henry H.
    [J]. OPTICS LETTERS, 2013, 38 (18) : 3485 - 3487
  • [3] Bismuth silicate glass: A new choice for 2 μm fiber lasers
    Ding, Jia
    Zhao, Guoying
    Tian, Ying
    Chen, Wei
    Hu, Lili
    [J]. OPTICAL MATERIALS, 2012, 35 (01) : 85 - 88
  • [4] MEASUREMENT OF CROSS-SECTION FOR STIMULATED EMISSION IN NEODYMIUM GLASS
    EDWARDS, JG
    [J]. NATURE, 1966, 212 (5063) : 752 - &
  • [5] Low-temperature growth of near-infrared luminescent Bi-doped SiOxNy thin films
    Fujii, Minoru
    Morimoto, Satoshi
    Kitano, Shohei
    Imakita, Kenji
    Qiu, Jianrong
    Sun, Hong-Tao
    [J]. OPTICS LETTERS, 2013, 38 (20) : 4224 - 4227
  • [6] Infrared luminescence from bismuth-doped silica glass
    Fujimoto, Y
    Nakatsuka, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (3B): : L279 - L281
  • [7] Regulation of structure rigidity for improvement of the thermal stability of near-infrared luminescence in Bi-doped borate glasses
    Guo, Qiangbing
    Xu, Beibei
    Tan, Dezhi
    Wang, Juechen
    Zheng, Shuhong
    Jiang, Wei
    Qiu, Jianrong
    Zhou, Shifeng
    [J]. OPTICS EXPRESS, 2013, 21 (23): : 27835 - 27840
  • [8] Ultrabroad emission from a bismuth doped chalcogenide glass
    Hughes, Mark A.
    Akada, Takao
    Suzuki, Takenobu
    Ohishi, Yasutake
    Hewak, Daniel W.
    [J]. OPTICS EXPRESS, 2009, 17 (22): : 19345 - 19355
  • [9] Enhancement of ultrafast nonlinear optical response of silicon nanocrystals by boron-doping
    Imakita, Kenji
    Ito, Masahiko
    Naruiwa, Ryo
    Fujii, Minoru
    Hayashi, Shinji
    [J]. OPTICS LETTERS, 2012, 37 (11) : 1877 - 1879
  • [10] Liang D, 2010, NAT PHOTONICS, V4, P511, DOI [10.1038/NPHOTON.2010.167, 10.1038/nphoton.2010.167]
1234