Advanced No-Field-Plate AlGaN/GaN HEMTs for Millimeter-Wave MMIC Applications

被引：0

作者：

Xu, Dong ^{[1
]}

Chu, K. K. ^{[1
]}

Diaz, J. A. ^{[1
]}

Pleasant, L. Mt. ^{[1
]}

Lender, R. ^{[1
]}

Schmanski, B. ^{[1
]}

Ashman, M. ^{[1
]}

Hulse, J. ^{[1
]}

Gerlach, M. ^{[1
]}

Zhu, Wenhua ^{[1
]}

Seekell, P. ^{[1
]}

Schlesinger, L. ^{[1
]}

Isaak, R. ^{[1
]}

Nichols, K. ^{[1
]}

Komiak, J. J. ^{[1
]}

Yang, X. P. ^{[1
]}

Duh, K. H. G. ^{[1
]}

Smith, P. M. ^{[1
]}

Chao, P. C. ^{[1
]}

机构：

[1] BAE Syst, Microelect Ctr, Elect Syst, Nashua, NH 03061 USA

来源：

2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2014年

关键词：

high electron mobility transistor; HEMT; gallium nitride; GaN; monolithic microwave integrated circuit; MMIC; millimeter-wave; MMW; power amplifier; wideband; Ka band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report successful development of an advanced no-field-plate AlGaN/GaN high electron mobility transistors (HEMTs) for millimeter-wave (MMW) applications. The HEMT adopts a reduced source-drain spacing of 2 mu m and the 0.2- mu m gate is placed 0.5 mu m off the source electrode. Additionally, the devices and monolithic microwave integrated circuits (MMICs) are fabricated on the SiC substrate of 2mil, enabling the fabrication of 15 mu m x 25 mu m slot via holes for realizing low inductance and more compact devices to facilitate MMW MMIC design. As a result, the narrow band MMICs have achieved an output power of 10.4 W with associated power added efficiency (PAE) of 31% at 28 GHz, and 10.7W and 27% at 36 GHz, respectively. Besides, a state-of-the-art 2-stage single-ended wideband MMIC demonstrates output power of 5-7.9 Wand associated PAE of 13-21% from low K-band to high Ka-band.

引用

页数：3