Implantation profile and linear absorption coefficients for positrons injected in solids from radioactive sources 22Na and 68Ge\68Ga

被引:65
作者
Dryzek, Jerzy
Singleton, Doug
机构
[1] Inst Nucl Phys PAN, PL-31342 Krakow, Poland
[2] Univ Zielona Gora, Inst Phys, PL-65516 Zielona Gora, Poland
[3] Calif State Univ Fresno, Dept Phys, Fresno, CA 93740 USA
关键词
positron annihilation; implantation profile;
D O I
10.1016/j.nimb.2006.08.017
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present measurements of the penetration depths of positrons from Na-22 and Ge-68\Ga-68 sources into thick targets. These measurements were made using a new apparatus with an HpGe detector. These new measurements allow one to determine the mass absorption coefficients for dozens of materials. As expected their values were Z-dependent. Additionally for Z > 32 some oscillatory dependence was observed. Using these measurements we propose an improvement to the well known results of Gleasen et al. [G.I. Gleason, I.D. Taylor, D.L. Tabern, Nucleonics 8 (1951) 12] for the formula giving the value of the mass absorption coefficient. We carried out Monte Carlo simulations for the implantation profile, which indicated that only in some intermediate region does one expect the standard exponential behavior. In the near and far regions the simulations indicate behavior different from the intermediate region. Based on the experimental studies and the Monte Carlo simulations a new formula for the implantation profile is proposed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:197 / 204
页数:8
相关论文
共 18 条
[1]   GEANT4-a simulation toolkit [J].
Agostinelli, S ;
Allison, J ;
Amako, K ;
Apostolakis, J ;
Araujo, H ;
Arce, P ;
Asai, M ;
Axen, D ;
Banerjee, S ;
Barrand, G ;
Behner, F ;
Bellagamba, L ;
Boudreau, J ;
Broglia, L ;
Brunengo, A ;
Burkhardt, H ;
Chauvie, S ;
Chuma, J ;
Chytracek, R ;
Cooperman, G ;
Cosmo, G ;
Degtyarenko, P ;
Dell'Acqua, A ;
Depaola, G ;
Dietrich, D ;
Enami, R ;
Feliciello, A ;
Ferguson, C ;
Fesefeldt, H ;
Folger, G ;
Foppiano, F ;
Forti, A ;
Garelli, S ;
Giani, S ;
Giannitrapani, R ;
Gibin, D ;
Cadenas, JJG ;
González, I ;
Abril, GG ;
Greeniaus, G ;
Greiner, W ;
Grichine, V ;
Grossheim, A ;
Guatelli, S ;
Gumplinger, P ;
Hamatsu, R ;
Hashimoto, K ;
Hasui, H ;
Heikkinen, A ;
Howard, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 506 (03) :250-303
[2]   POSITRON IMPLANTATION IN MYLAR [J].
BISI, A ;
GAMBARINI, G ;
ZAPPA, L .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 53 (02) :428-434
[3]   POSITRON IMPLANTATION-PROFILE EFFECTS IN SOLIDS [J].
BRANDT, W ;
PAULIN, R .
PHYSICAL REVIEW B, 1977, 15 (05) :2511-2518
[4]   Source correction in positron annihilation lifetime spectroscopy [J].
Djourelov, N ;
Misheva, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (12) :2081-2087
[5]  
Dryzek J, 2000, PHYS STATUS SOLIDI A, V179, P337, DOI 10.1002/1521-396X(200006)179:2<337::AID-PSSA337>3.0.CO
[6]  
2-H
[7]   Defect depth scanning over the positron implantation profile in aluminum [J].
Dryzek, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (05) :1099-1104
[8]  
GLEASON GI, 1951, NUCLEONICS, V8, P12
[9]   POSITRON IMPLANTATION PROFILE IN NICKEL [J].
HANSEN, HE ;
LINDEROTH, S ;
PETERSEN, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (02) :99-103
[10]  
ILIC RD, FOTELP 2K3 PHOTONS E