Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"

被引：31

作者：

Chassagne, T

Leycuras, A

Balloud, C

Arcade, P

Peyre, H

Juillaguet, S

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France

[2] NOVASIC, Savoie Technol, Le Bourget Du Lac, France

[3] Univ Montpellier 2, Grp Etude Semicond, F-34095 Montpellier, France

[4] CNRS, F-34095 Montpellier, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷

关键词：

3C-SiC; hot wall resistive heating reactor; LTPL;

D O I：

10.4028/www.scientific.net/MSF.457-460.273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With respect to more standard and more widely used inductive-heating, the resistively-heated reactors offer the strong advantage of low cost, easy installation and low running constraints. Combined with an easy adaptation to the increasing size of wafers, this results in very strong advantages. This simple technique was mainly restricted to the growth of small size samples for academic purpose [1]. In this work we report an investigation of 2 inch SiC layers deposited in a new, horizontal and resistively-heated, "hot-wall" LP-CVD reactor specially designed for large flexibility.

引用

页码：273 / 276

页数：4

共 4 条

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Leycuras, A
[J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 241 - 244

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