Effects of oxygen plasma condition on MBE growth of ZnO

被引：56

作者：

Sakurai, K ^{[1
]}

Kanehiro, M

Nakahara, K

Tanabe, T

Fujita, S

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Rohm Co Ltd, Opt Device Res & Dev Div, Kyoto 6158585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

growth direction; ZnO; MBE; bulk ZnO; photoluminescence;

D O I：

10.1016/S0022-0248(99)00610-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report growth condition optimizations of ZnO films by plasma-assisted molecular beam epitaxy. Effects of oxygen plasma conditions on film quality were evaluated by photoluminescence, X-ray characterization and scanning electron microscopy. From the growth experiments on c-plane sapphire and bulk ZnO ( + c, - c) substrates, it was suggested that the surface morphology is strongly related with the growth direction of ZnO parallel to its c-axis, and was found to be controllable by optimization of oxygen plasma conditions. (C) 2000 Elsevier Science B,V. All rights reserved.

引用

页码：522 / 525

页数：4

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