TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane

被引：9

作者：

Mussi, A. ^{[1
]}

Demenet, J. L. ^{[1
]}

Rabier, J. ^{[1
]}

机构：

[1] Univ Poitiers, SP2MI, CNRS,UMR 6630, Met Phys Lab, F-86962 Futuroscope, France

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2006年 / 86卷 / 09期

关键词：

D O I：

10.1080/09500830600930198

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deformation microstructure of single crystals of 4H-SiC resulting from microindentations on a prismatic surface was investigated by TEM. Indentations were performed at 400 and 675 degrees C, i.e. below the brittle to ductile transition temperature of 4H-SiC ( temperature close to 1100 degrees C). TEM analysis reveals dissociated dislocations as well as extended stacking faults in the basal plane. In addition, perfect edge dislocations are observed on prismatic planes. From the observations, it is assumed that perfect dislocations are nucleated in the prismatic plane and cross-slip on the basal one where they dissociate.

引用

页码：561 / 568

页数：8

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