The influence of Ti capping layers on CoSi2 formation

被引：33

作者：

Detavernier, C

Van Meirhaeghe, RL

Cardon, F

Donaton, RA

Maex, K

机构：

[1] Univ Ghent, Lab Kristallog Studie Vaste Stof, Vakgrp Vaste Stofwetenschappen, B-9000 Ghent, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, INSYS, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期

关键词：

cobalt silicide; titanium capping layer; oxygen contamination; silicidation;

D O I：

10.1016/S0167-9317(99)00272-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cobalt silicide formation is very sensitive to the presence of oxygen. Oxygen contamination may originate from different sources: impurities in the annealing ambient, oxygen incorporated within the deposited Co layer and interfacial oxide at the Co/Si interface. In this work, it is shown that the cause of the sensitivity towards oxygen contamination is the formation of a SiOx diffusion barrier between CoSi and the unreacted Co. This causes an increase in the activation energy for CoSi formation. Furthermore, we will show that a titanium capping layer eliminates the sensitivity of CoSi2 formation for oxygen contamination, thus improving the formation of CoSi2 layers. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 132

页数：8

共 12 条

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Besser P. R., 1998, MRS S P

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