Optical conductivity of one-dimensional narrow-gap semiconductors

被引:0
|
作者
Lee, HC [1 ]
机构
[1] Sungkyunkwan Univ, Dept Phys, Phys Res Div BK21, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Dept Phys, Inst Basic Sci, Suwon 440746, South Korea
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D O I
10.1142/S0217979202010361
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical conductivities of two one-dimensional narrow-gap semiconductors, anticrossing quantum Hall edge states and carbon nanotubes, are studied using bosonization method. A lowest order renormalization group analysis indicates that the bare band gap can be treated perturbatively at high frequency/temperature. At very low energy scale the optical conductivity is dominated by the excitonic contribution, while at temperature higher than a crossover temperature the excitonic features axe eliminated by thermal fluctuations. In case of carbon nanotubes the crossover temperature scale is estimated to be 300 K.
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页码:1499 / 1509
页数:11
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