Graphene in proximity to magnetic insulating LaMnO3

被引：14
作者：
Cheng, Guanghui [1 ,2 ]
Wei, Laiming [1 ,2 ]
Cheng, Long [1 ,2 ]
Liang, Haixing [1 ,2 ]
Zhang, Xiaoqiang [1 ,2 ]
Li, Hui [1 ,2 ]
Yu, Guolin [3 ]
Zeng, Changgan [1 ,2 ,4 ,5 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
[4] Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, HFNL, Hefei 230026, Anhui, Peoples R China
[5] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 13期
关键词：
THIN-FILMS; HALL;
D O I：
10.1063/1.4897224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Proximity to functional substrates may enhance the coupling between the quantum degrees of freedom and thus develop nontrivial quantum effects in graphene. Here, we demonstrate the successful fabrication of graphene in proximity to atomically flat magnetic insulating LaMnO3 films. The insulating nature of the LaMnO3 films not only ensures the electronic transport only occur in the graphene layers but also allow them to serve as dielectric layers for gating. Transport measurements reveal anomalous behaviors, including asymmetrical longitudinal magnetoresistivity and nonlinear Hall effect. This work may pave a way toward the realization of intriguing quantum phases in graphene. (C) 2014 AIP Publishing LLC.
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页数：4
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