Low voltage CCD image sensor with optimized reset operation

被引：1

作者：

Park, Sangsik ^{[1
]}

Uh, Hyungsoo ^{[1
]}

Park, Soeun ^{[1
]}

机构：

[1] Sejong Univ, Dept Elect, Kwangjin Ku, Seoul 143747, South Korea

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 08期

关键词：

CCD; image sensor; reset; charge injection; threshold voltage; HOT-CARRIER DEGRADATION; INDUCED MOSFET DEGRADATION; OXIDE-SILICON STRUCTURES; HOLE INJECTION; N-MOSFETS; AC STRESS; ELECTRON; TRANSISTORS; GENERATION;

D O I：

10.1016/j.mejo.2005.10.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A charge coupled device (CCD) image sensor operating with 3.0 V-reset has been developed using a charge injection to the gate dielectrics of a MOS structure. A DC bias generating circuit was added to the reset structure, which sets reference voltage and holds the signal charge to be detected. The generated Dc bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2 to 5.5 V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with 492(H) X 510(V) pixels adopting this structure showed complete reset operation with the driving voltage of 3.0 V. The image taken with the image sensor utilizing this structure was not saturated to the illumination of 30 lux, that is, showed no image distortion. (c) 2005 Published by Elsevier Ltd.

引用

页码：778 / 782

页数：5

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