Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor

Two-state inversion capacitances of a metal-oxide-semiconductor capacitor (MOSCAP) at varied AC frequencies after negative/positive constant voltage stress (negative/positive CVS) treatments are investigated. When the device was biased into inversion, a low/high inversion-capacitance state (set state/reset state) was achieved after the negative/positive CVS treatments with/without a few trapped electrons in the ultrathin SiO2 layer. The inversion capacitances of set states were frequency independent, whereas those of reset states increased with the decreasing frequencies. It is different from the general characteristics of an MOSCAP whose inversion capacitances disperse at low frequencies. For this observed finding of the two-state inversion capacitances at varied frequencies, a mechanism of trapped-electrons-induced screening effect on the inversion electrons is proposed. The number of the trapped electrons in the SiO2 layer affects the number of the inversion electrons, and thus dominates the values of the inversion capacitances. Besides, simulation curves of the inversion capacitances of set states are demonstrated. They are fitted well with the experimental data utilizing the mechanism we proposed. This work investigates further into the influence of the trapped electrons in the ultrathin SiO2 layer on the inversion capacitance response.