Influence of Sn substitution on the thermoelectric properties in YbAl3

被引:12
|
作者
Li, J. Q. [1 ,2 ]
Liu, X. Y. [3 ]
Li, Y. [1 ,2 ]
Song, S. H. [3 ]
Liu, F. S. [1 ,2 ]
Ao, W. Q. [1 ,2 ]
机构
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
[2] Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
[3] Harbin Inst Technol, Shenzhen Grad Sch, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
YbAl3; compound; Sn substitution; Thermoelectric properties;
D O I
10.1016/j.jallcom.2014.02.112
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The compound YbAl3 exhibits a very high power factor, but also rather a large thermal conductivity, leading to a low figure of merit. The solid solutions YbAl3-xSnx with x = 0, 0.05, 0.10, 0.20, 0.30 and 0.50 were synthesized by high frequency induction melting, spark plasma sintering (SPS) and annealing treatment. The influence of Sn substitution on the thermoelectric properties of YbAl3 was investigated. The carrier concentration increases but the carrier mobility decreases with increasing x. The electrical resistivity of the sample does not increase apparently with increasing Sn content x until 0.10 but increases evidently with further increasing Sn content x. The absolute Seebeck coefficient increases with increasing Sn content x until 0.20 while the thermal conductivity decreases significantly with increasing x. As a result, the figure of merit ZT can be enhanced by the substitution of Sn for Al. The maximum ZT of 0.27 could be obtained in the YbAl2.90Sn0.10 at 300 K, which is larger than 0.18 for the pure YbAl3 or 0.19 for the Sc-doped YbAl3. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:8 / 12
页数:5
相关论文
共 50 条
  • [31] The thermoelectric properties of CoSb3 compound doped with Te and Sn synthesized at different pressure
    Jiang, Yiping
    Jia, Xiaopeng
    Ma, Hongan
    MODERN PHYSICS LETTERS B, 2017, 31 (28):
  • [32] Effects of Nb substitution on thermoelectric properties of CrSi2
    Nagai, Hiroki
    Takamatsu, Tomohisa
    Iijima, Yoshihiko
    Hayashi, Kei
    Miyazaki, Yuzuru
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 687 : 37 - 41
  • [33] The influence of the nanostructure geometry on the thermoelectric properties
    AL-Badry, Lafy E.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 83 : 201 - 206
  • [34] Effects of Lu and Ni Substitution on Thermoelectric Properties of Ca3Co4O9+δ
    Yang, Wenchao
    Qian, Haoji
    Gan, Jinyu
    Wei, Wei
    Wang, Zhihe
    Tang, Guodong
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) : 4171 - 4176
  • [35] Effect of La3+ substitution on the structural and thermoelectric properties of Ca3-xLaxCo4O9+δ
    Cha, J. S.
    Kim, D. H.
    Hong, H. Y.
    Kim, G. H.
    Park, K.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2019, 39 (11) : 3320 - 3326
  • [36] Effects of Lu and Ni Substitution on Thermoelectric Properties of Ca3Co4O9+δ
    Wenchao Yang
    Haoji Qian
    Jinyu Gan
    Wei Wei
    Zhihe Wang
    Guodong Tang
    Journal of Electronic Materials, 2016, 45 : 4171 - 4176
  • [37] Effects of In Substitution for Ga on the Thermoelectric Properties of Type-VIII Clathrate Ba8Ga16Sn30 Single Crystals
    Yuexing Chen
    Baoli Du
    Kousuke Kajisa
    Toshiro Takabatake
    Journal of Electronic Materials, 2014, 43 : 1916 - 1921
  • [38] Effects of In Substitution for Ga on the Thermoelectric Properties of Type-VIII Clathrate Ba8Ga16Sn30 Single Crystals
    Chen, Yuexing
    Du, Baoli
    Kajisa, Kousuke
    Takabatake, Toshiro
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (06) : 1916 - 1921
  • [39] Improvement in The Thermoelectric Properties by Ag/Sb Co-substitution in PbSe
    Li, J. Q.
    Li, X. X.
    Li, S. P.
    Wang, L.
    Liu, F. S.
    Ao, W. Q.
    MATERIALS FOR ENERGY CONVERSION AND STORAGE, 2012, 519 : 179 - +
  • [40] Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound
    Bo Duan
    Pengcheng Zhai
    Lisheng Liu
    Qingjie Zhang
    Journal of Electronic Materials, 2011, 40 : 932 - 936