On-line characterization of HSG polysilicon by AFM

被引：0

作者：

Ge, LM ^{[1
]}

el-Hamdi, MA ^{[1
]}

Alvis, R ^{[1
]}

Sawaya, S ^{[1
]}

Gifford, D ^{[1
]}

Lainez, R ^{[1
]}

Hendrix, L ^{[1
]}

机构：

[1] Digital Instruments, Veeco Metrol Grp, Santa Barbara, CA 93117 USA

来源：

IN-LINE METHODS AND MONITORS FOR PROCESS AND YIELD IMPROVEMENT | 1999年 / 3884卷

关键词：

AFM; HSG; polysilicon; process monitoring;

D O I：

10.1117/12.361340

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Automated AFM (Atomic Force Microscope) has been used to characterize the structure of the HSG (hemi-spherical grain) polysilicon film. The structure characterization parameters such as the surface roughness, the grain size and density of the storage polysilicon were returned by AFM. In this paper we carried out designed experiments and characterized HSG samples with variant growth temperatures and doping densities. We compare the new AFM technique and the conventional optical reflectivity and SEM techniques. The results show that AFM data has a strong correlation with the electric response of the DRAM devices while the optical reflectivity and SEM measurements show weak or no correlation. Among the many data analysis performed by the AFM software, kurtosis and skewness were found to be valuable parameters for the optimization and control of both capacitance and ONO BV (breakdown voltage) of the DRAM devices.

引用

页码：265 / 268

页数：4