Thermally stimulated terahertz radiation of plasmon-phonon polaritons in GaAs

被引：8

作者：

Sirmulis, E. ^{[1
]}

Silenas, A. ^{[1
]}

Pozela, K. ^{[1
]}

Pozela, J. ^{[1
]}

Juciene, V. ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 01期

关键词：

ELECTROMAGNETIC-FIELDS; SURFACE; SOLIDS;

D O I：

10.1007/s00339-013-7931-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermally stimulated excitation of radiative modes of surface plasmon-phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation selective emission is studied and experimentally observed. The selective high-power THz radiation emitters in the 7-8 and 10-15 THz frequency ranges based on the heated highly doped (n > 5a <...10(17) cm(-3)) GaAs plates are proposed.

引用

页码：199 / 202

页数：4

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