Resistor-Triggered SCR Device for ESD Protection in High-Speed I/O Interface Circuits

被引:23
作者
Lin, Chun-Yu [1 ]
Chen, Chun-Yu [1 ]
机构
[1] Natl Taiwan Normal Univ, Dept Elect Engn, Taipei 106, Taiwan
关键词
Electrostatic discharge (ESD); high-speed; silicon-controlled rectifier (SCR); SILICON-CONTROLLED RECTIFIER; DESIGN;
D O I
10.1109/LED.2017.2696980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, an on-chip electrostatic discharge (ESD) protection device was proposed for highspeed I/O interface circuits. A resistor-triggered silicon-controlled rectifier device with improved performance was designed and investigated in a nanoscale CMOS process. As verified in a 0.18-mu m CMOS process, the proposed design exhibits a lower clamping voltage and low enough overshoot voltage during ESD stress conditions, and lower parasitic capacitance and low enough leakage current during normal circuit operating conditions. Therefore, the proposed design is suitable for ESD protection of high-speed circuits in low-voltage CMOS processes.
引用
收藏
页码:712 / 715
页数:4
相关论文
共 10 条
[1]  
Chang T., 2012, P EOS ESD S SEP
[2]   High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection [J].
Cui, Qiang ;
Salcedo, Javier A. ;
Parthasarathy, Srivatsan ;
Zhou, Yuanzhong ;
Liou, Juin J. ;
Hajjar, Jean J. .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) :178-180
[3]   Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits [J].
Ker, MD ;
Hsu, KC .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (02) :235-249
[4]   Low-Leakage and Low-Trigger-Voltage SCR Device for ESD Protection in 28-nm High-k Metal Gate CMOS Process [J].
Lin, Chun-Yu ;
Wu, Yi-Han ;
Ker, Ming-Dou .
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (11) :1387-1390
[5]   Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process [J].
Lin, Chun-Yu ;
Chang, Rong-Kun .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (09) :2824-2829
[6]   Speed optimized diode-triggered SCR (DTSCR) for RF ESD protection of ultra-sensitive IC nodes in advanced technologies [J].
Mergens, MPJ ;
Russ, CC ;
Verhaege, KG ;
Armer, J ;
Jozwiak, PC ;
Mohn, RP ;
Keppens, B ;
Trinh, CS .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) :532-542
[7]   A 40 Gb/s Serial Link Transceiver in 28 nm CMOS Technology [J].
Navid, Reza ;
Chen, E-Hung ;
Hossain, Masum ;
Leibowitz, Brian ;
Ren, Jihong ;
Chou, Chuen-Huei Adam ;
Daly, Barry ;
Aleksic, Marko ;
Su, Bruce ;
Li, Simon ;
Shirasgaonkar, Makarand ;
Heaton, Fred ;
Zerbe, Jared ;
Eble, John .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (04) :814-827
[8]  
Nazemi A, 2015, ISSCC DIG TECH PAP I, V58, P58, DOI 10.1109/ISSCC.2015.7062924
[9]   Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot Voltage [J].
Sun, Ruei-Cheng ;
Wang, Zhixin ;
Klebanov, Maxim ;
Liang, Wei ;
Liou, Juin J. ;
Liu, Don-Gey .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) :424-426
[10]  
Vassilev V., 2002, MICROELECTRON RELIAB, P111