Focused ion beam induced deposition: fabrication of three-dimensional microstructures and Young's modulus of the deposited material

被引:81
作者
Reyntjens, S [1 ]
Puers, R [1 ]
机构
[1] Katholieke Univ Leuven, ESAT, MICAS, B-3001 Heverlee, Belgium
关键词
D O I
10.1088/0960-1317/10/2/314
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, some of the possibilities of focused ion beams for applications in microsystem technology are explored. Unlike most previous studies, the emphasis is on 'additive' techniques, i.e. localized maskless deposition of metals and insulators. More precisely, we will show the possibility of fabricating small three-dimensional structures, using focused ion beam deposition of silicon oxide. Deposition examples will show that the technique is most promising for small post-processing steps or prototyping, because of its high degree of flexibility. Furthermore, an investigation into the mechanical properties of the deposited material is presented. More specifically, the Young's modulus of the deposited silicon oxide is determined.
引用
收藏
页码:181 / 188
页数:8
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