Cd-Free Cu2ZnSnS4 solar cell with an efficiency greater than 10% enabled by Al2O3 passivation layers

被引:135
作者
Cui, Xin [1 ]
Sun, Kaiwen [1 ]
Huang, Jialiang [1 ]
Yun, Jae S. [1 ]
Lee, Chang-Yeh [1 ]
Yan, Chang [1 ]
Sun, Heng [1 ]
Zhang, Yuanfang [1 ]
Xue, Chaowei [1 ]
Eder, Katja [2 ]
Yang, Limei [2 ]
Cairney, Julie M. [2 ]
Seidel, Jan [3 ]
Ekins-Daukes, N. J. [1 ]
Green, Martin [1 ]
Hoex, Bram [1 ]
Hao, Xiaojing [1 ]
机构
[1] UNSW Sydney, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[2] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW, Australia
[3] UNSW Sydney, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会; 中国国家自然科学基金;
关键词
SILICON SURFACE PASSIVATION; ATOMIC LAYER; HETEROJUNCTION; DEPOSITION; RECOMBINATION; PERFORMANCE; EVOLUTION; DENSITIES; SULFUR; FILMS;
D O I
10.1039/c9ee01726g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Environmentally friendly earth-abundant Cd-free Cu2ZnSnS4 (CZTS) solar cells have recently achieved increasing power conversion efficiency by using ZnSnO as the buffer layer. However, the large open circuit voltage (V-oc) deficit remains the key concern. Here, we report a Cd-free CZTS solar cell that exhibits an energy conversion efficiency of 10.2% resulting from the application of an aluminium oxide (Al2O3) passivation layer prepared by atomic layer deposition (ALD). We found that the application of full ALD cycles as well as trimethylaluminum (TMA) exposures resulted in a significant increase in V-oc and relate this to the properties of the CZTS interface. Both processes facilitate the formation of a thicker Cu-deficient nanolayer with a higher concentration of Na and O, forming a homogeneous passivation layer across the CZTS surface. This nanolayer reduces the local potential fluctuation of band edges and leads to the widened electrical band gap and suppressed defects recombination at the heterojunction interface, thus improvement in V-oc and device performance. The ability of nanolayers to alter the atomic composition in the near surface region of compound semiconductors might be beneficial for a wider range of semiconductor devices.
引用
收藏
页码:2751 / 2764
页数:14
相关论文
共 53 条
  • [1] Bär M, 2011, APPL PHYS LETT, V99, DOI [10.1063/1.3637574, 10.1063/1.3663327]
  • [2] The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells
    Brennan, Thomas P.
    Bakke, Jonathan R.
    Ding, I-Kang
    Hardin, Brian E.
    Nguyen, William H.
    Mondal, Rajib
    Bailie, Colin D.
    Margulis, George Y.
    Hoke, Eric T.
    Sellinger, Alan
    McGehee, Michael D.
    Bent, Stacey F.
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (35) : 12130 - 12140
  • [3] Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer
    Cui, Xin
    Sun, Kaiwen
    Huang, Jialiang
    Lee, Chang-Yeh
    Yan, Chang
    Sun, Heng
    Zhang, Yuanfang
    Liu, Fangyang
    Hossain, Md. Anower
    Zakaria, Yahya
    Wong, Lydia Helena
    Green, Martin
    Hoex, Bram
    Hao, Xiaojing
    [J]. CHEMISTRY OF MATERIALS, 2018, 30 (21) : 7860 - 7871
  • [4] Reaction of Trimethylaluminum with Water on Pt(111) and Pd(111) from 10-5 to 10-1 Millibar
    Detwiler, Michael D.
    Gharachorlou, Amir
    Mayr, Lukas
    Gu, Xiang-Kui
    Liu, Bin
    Greeley, Jeffrey
    Delgass, W. Nicholas
    Ribeiro, Fabio H.
    Zemlyanov, Dmitry Y.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (05) : 2399 - 2411
  • [5] Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
    Dingemans, G.
    Beyer, W.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (15)
  • [6] The Role of Sulfur in Solution-Processed Cu2ZnSn(S,Se)4 and its Effect on Defect Properties
    Duan, Hsin-Sheng
    Yang, Wenbing
    Bob, Brion
    Hsu, Chia-Jung
    Lei, Bao
    Yang, Yang
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (11) : 1466 - 1471
  • [7] Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3
    Erkan, Mehmet Eray
    Chawla, Vardaan
    Scarpulla, Michael A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (19)
  • [8] Chemical Consequences of Alkali Inhomogeneity in Cu2ZnSnS4 Thin-Film Solar Cells
    Gershon, Talia
    Hamann, Cayla
    Hopstaken, Marinus
    Lee, Yun Seog
    Shin, Byungha
    Haight, Richard
    [J]. ADVANCED ENERGY MATERIALS, 2015, 5 (19)
  • [9] The Role of Sodium as a Surfactant and Suppressor of Non-Radiative Recombination at Internal Surfaces in Cu2ZnSnS4
    Gershon, Talia
    Shin, Byungha
    Bojarczuk, Nestor
    Hopstaken, Marinus
    Mitzi, David B.
    Guha, Supratik
    [J]. ADVANCED ENERGY MATERIALS, 2015, 5 (02)
  • [10] Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)
    Gharachorlou, Amir
    Detwiler, Michael D.
    Gu, Xiang-Kui
    Mayr, Lukas
    Kloetzer, Bernhard
    Greeley, Jeffrey
    Reifenberger, Ronald G.
    Delgass, W. Nicholas
    Ribeiro, Fabio H.
    Zemlyanov, Dmitry Y.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (30) : 16428 - 16439