Structural transition, large strain induced by B-site equivalent doping with Hf4+ ions in BNT-based ceramics

被引:9
|
作者
Xiong, Shunjin [1 ]
Huang, Rongxia [1 ]
Peng, Congfei [1 ]
Dai, Yejing [2 ]
Li, Jiajiu [1 ]
Bai, Wen [1 ]
Lin, Hua-Tay [1 ]
机构
[1] Guangdong Univ Technol, Sch Electromech Engn, Guangzhou 510006, Peoples R China
[2] Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China
基金
中国国家自然科学基金;
关键词
Lead-free piezoelectric ceramics; BNT-Based; HfO2; addition; Electro-strain; ENHANCED PIEZOELECTRIC PROPERTIES; LEAD-FREE; ELECTRICAL-PROPERTIES; TEMPERATURE; EVOLUTION; PROPERTY;
D O I
10.1016/j.ceramint.2020.11.027
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A series of HfO2-modified (Bi0.475Na0.405K0.055Li0.015)(0.95)Ba(0.05)Ti((1-x))HfxO(3) (x = 0-0.015) lead-free ceramics were prepared. Results of detailed characterizations showed that the addition of HfO2 had little influence on the grain size, and all of the samples showed the pure perovskite structure. As the Hf4+ content increases, the samples changed from the normal ferroelectric phase to the ergodic relaxor state at room temperature, and the ceramics with x = 0.01 showed a high electro-strain of 0.295% at 6 kV/mm. Therefore, this study provides a new insight into of how the HfO2 addition influences the ferroelectric property of the BNT-based ceramics by B-site substitution.
引用
收藏
页码:6842 / 6847
页数:6
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