Tungsten-titanium diffusion barriers for silver metallization

被引：48
作者：
Bhagat, Shekhar
Han, Hauk
Alford, T. L. [1 ]
机构：
[1] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Sci, Sci & Engn Mat Program, Tempe, AZ 85287 USA
来源：
THIN SOLID FILMS | 2006年 / 515卷 / 04期
基金：
美国国家科学基金会;
关键词：
silver metallization; diffusion barrier; titanium; tungsten;
D O I：
10.1016/j.tsf.2006.03.049
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diffusion barrier properties and thermal stability of reactive sputtered W-Ti films between Ag and Si were studied using X-ray diffractometry, X-ray fluorescence spectrometry, Rutherford backscattering spectrometry, four point probe analysis, and field emission scanning electron microscopy. These films were annealed in vacuum at different temperatures for 1 h. Silver layers were found to be stable up to 600 degrees C after which, Ag agglomerated at 700 degrees C. Rutherford backscattering analysis showed that interfacial reactions took place at temperatures higher than 400 degrees C. Four point probe resistivity measurements showed that the films were stable up to 600 degrees C. At 700 degrees C the resistivity increased abnormally. These results support further investigation of W-Ti films as a potential barrier layer for Ag metallization in the high temperature electronics. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：1998 / 2002
页数：5
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