Breakdown Characteristics of β-(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

被引：87

作者：

Joishi, Chandan ^{[1
,2
]}

Zhang, Yuewei ^{[1
]}

Xia, Zhanbo ^{[1
]}

Sun, Wenyuan ^{[1
]}

Arehart, Aaron R. ^{[1
]}

Ringel, Steven ^{[1
,3
]}

Lodha, Saurabh ^{[2
]}

Rajan, Siddharth ^{[1
,3
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India

[3] Ohio State Univ, Dept ofMaterial Sci Engn, Columbus, OH 43210 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 08期

关键词：

beta-(Al0.22Ga0.78)(2)O-3; beta-Ga2O3; MODFETs; SiNx; passivation; field-plates; VOLTAGE;

D O I：

10.1109/LED.2019.2921116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate voltage breakdown of a beta-(Al0.22Ga0.78)(2)O-3/Ga2O3 modulation-doped field-effect transistor with a gate-connected field-plate and silicon nitride (SiNx) as the passivation layer. Breakdown characteristics were found to be limited by the Schottky gate. We demonstrate a high breakdown voltage of 1.37 kV for a gate-to-drain separation (L-GD) of 16 mu m with a specific ON-resistance of 120.1 m Omega.cm(2). A high average electric field of 3.9 MV/cm is extracted for LGD = 320 nm. The reported results suggest SiNx as a potential passivation dielectric for Ga2O3.

引用

页码：1241 / 1244

页数：4

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