Semiconductor superlattices

被引：0
|
作者：
Von Känel, H [1 ]
机构：
[1] INFM, I-22100 Como, Italy
来源：
PHYSICS AND TECHNOLOGY OF THIN FILMS | 2004年
关键词：
D O I：
10.1142/9789812702876_0004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The formation and electronic structure of semiconductor superlattices is treated at an elementary level. Structural characterization by X-ray diffraction and Raman scattering is discussed on the example of strained-layer Si/Ge superlattices grown onto Si(001). Possible opto-electronic applications are outlined.
引用
收藏
页码：70 / 84
页数：15
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